[C-3-4] Plasma Cure Process for Porous SiOCH Films using CF4 Gas

Kazuhiro Tomioka、Junya Nakahira、Seiichi Kondo、Shinichi Ogawa、Shuichi Saito (1.Semiconductor Leading Edge Technologies, Inc. (Selete))

https://doi.org/10.7567/SSDM.2007.C-3-4