[C-8-4] Highly Reliable Cu Interconnect using Low Hydrogen Silicon Nitride Film Deposited at Low Temperature for Cu-Diffusion Barrier

T. Murata、K. Kono、Y. Tsunemine、M. Fujisawa、M. Matsuura、K. Asai、M. Kojima (1.Process Technology Development Division, Renesas Technology Corporation)

https://doi.org/10.7567/SSDM.2007.C-8-4