Highly Reliable Cu Interconnect using Low Hydrogen Silicon Nitride Film Deposited at Low Temperature for Cu-Diffusion Barrier

T. Murata; K. Kono; Y. Tsunemine; M. Fujisawa; M. Matsuura; K. Asai; M. Kojima

doi:https://doi.org/10.7567/SSDM.2007.C-8-4

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[C-8-4] Highly Reliable Cu Interconnect using Low Hydrogen Silicon Nitride Film Deposited at Low Temperature for Cu-Diffusion Barrier

T. Murata, K. Kono, Y. Tsunemine, M. Fujisawa, M. Matsuura, K. Asai, M. Kojima (1.Process Technology Development Division, Renesas Technology Corporation)

https://doi.org/10.7567/SSDM.2007.C-8-4

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