Ion-Sensitive Field Effect Transistor Based on Silicon and Zinc Oxide for DNA Sensor

Munetoshi Seki; Takeshi Uno; Masamichi Noguchi; Hitoshi Tabata

doi:https://doi.org/10.7567/SSDM.2007.D-7-5

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[D-7-5] Ion-Sensitive Field Effect Transistor Based on Silicon and Zinc Oxide for DNA Sensor

Munetoshi Seki, Takeshi Uno, Masamichi Noguchi, Hitoshi Tabata (1.Univ. of Tokyo, Dept of Electronic Eng., School of Eng., 2.Univ. of Tokyo, Dept. of Bioeng., School of Eng.)

https://doi.org/10.7567/SSDM.2007.D-7-5

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