High-Brightness Ultraviolet LEDs on Si Using Quaternary InAlGaN Multi-Quantum-Wells with High Indium Contents

Yasuyuki Fukushima; Yuji Takase; Manabu Usuda; Kenji Orita; Tetsuzo Ueda; Tsuyoshi Tanaka

doi:https://doi.org/10.7567/SSDM.2007.E-9-1

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[E-9-1] High-Brightness Ultraviolet LEDs on Si Using Quaternary InAlGaN Multi-Quantum-Wells with High Indium Contents

Yasuyuki Fukushima、Yuji Takase、Manabu Usuda、Kenji Orita、Tetsuzo Ueda、Tsuyoshi Tanaka (1.Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.2007.E-9-1

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