[F-1-5] Formation of InGaAs-On-Insulator Structures by Epitaxial Lateral Over Growth from (111) Si

T. Hoshii、M. Deura、M. Shichijo、M. Sugiyama、S. Sugahara、M. Takenaka、Y. Nakano、S. Takagi (1.Graduate School of Frontier Science, The University of Tokyo、2.Department of Electronic Engineering, School of Engineering, The University of Tokyo、3.Research Center for Advanced Science and Technology, The University of Tokyo、4.Imaging Science and Engineering Laboratory, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.2007.F-1-5