Growth of GaN on Si (111) using simultaneous AlN/α-Si3N4 buffer structure

Tsung Hsi Yang; Jet-Chung Chang; Jui Tai Ku; Shih-Guo Shen; Yi-Cheng Chen; Chun-Yen Chang

doi:https://doi.org/10.7567/SSDM.2007.F-1-6

[F-1-6] Growth of GaN on Si (111) using simultaneous AlN/α-Si3N4 buffer structure

Tsung Hsi Yang、Jet-Chung Chang、Jui Tai Ku、Shih-Guo Shen、Yi-Cheng Chen、Chun-Yen Chang (1.Department of Electronics Engineering, Nation Chiao Tung University、2.Microelectronics and Information Systems Research Center, Nation Chiao Tung University、3.Department of Electrophysics, Nation Chiao Tung University)

https://doi.org/10.7567/SSDM.2007.F-1-6

2007 International Conference on Solid State Devices and Materials

[F-1-6] Growth of GaN on Si (111) using simultaneous AlN/α-Si3N4 buffer structure