Demonstration of holes in strained Ge quantum wells with much higher drift mobility and density than that of electrons in strained Si channels

Maksym Myronov; Kentarou Sawano; Kohei M. Itoh; Yasuhiro Shiraki

doi:https://doi.org/10.7567/SSDM.2007.F-3-2

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[F-3-2] Demonstration of holes in strained Ge quantum wells with much higher drift mobility and density than that of electrons in strained Si channels

Maksym Myronov、Kentarou Sawano、Kohei M. Itoh、Yasuhiro Shiraki (1.Musashi Institute of Technology, Advanced Research Laboratories、2.Keio University, Dept. of Applied Physics and Physico-Imformatics)

https://doi.org/10.7567/SSDM.2007.F-3-2

▲