[F-3-2] Demonstration of holes in strained Ge quantum wells with much higher drift mobility and density than that of electrons in strained Si channels

Maksym Myronov, Kentarou Sawano, Kohei M. Itoh, Yasuhiro Shiraki (1.Musashi Institute of Technology, Advanced Research Laboratories, 2.Keio University, Dept. of Applied Physics and Physico-Imformatics)

https://doi.org/10.7567/SSDM.2007.F-3-2