New Finding of Pt Segregation at the NiSi/Si Interface by Atom Probe

Haruko Akutsu; Hiroshi Uchida; Kazuhiko Nakamura; Toshihiko Iinuma; Kyoichi Suguro

doi:https://doi.org/10.7567/SSDM.2007.F-3-6L

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[F-3-6L] New Finding of Pt Segregation at the NiSi/Si Interface by Atom Probe

Haruko Akutsu、Hiroshi Uchida、Kazuhiko Nakamura、Toshihiko Iinuma、Kyoichi Suguro (1.TOSHIBA Corporation Semiconductor Company、2.Toshiba Nanoanalysis Corporation)

https://doi.org/10.7567/SSDM.2007.F-3-6L

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