New Finding of Pt Segregation at the NiSi/Si Interface by Atom Probe

Haruko Akutsu; Hiroshi Uchida; Kazuhiko Nakamura; Toshihiko Iinuma; Kyoichi Suguro

doi:https://doi.org/10.7567/SSDM.2007.F-3-6L

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[F-3-6L] New Finding of Pt Segregation at the NiSi/Si Interface by Atom Probe

Haruko Akutsu, Hiroshi Uchida, Kazuhiko Nakamura, Toshihiko Iinuma, Kyoichi Suguro (1.TOSHIBA Corporation Semiconductor Company, 2.Toshiba Nanoanalysis Corporation)

https://doi.org/10.7567/SSDM.2007.F-3-6L

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