[F-9-2] Characterization of the Sc2O3/La2O3 High-κ Gate Stack by STM

Y. C. Ong、D. S. Ang、S. J. O’Shea、K. L. Pey、T. Kawanago、K. Kakushima、H. Iwai (1.School of Electrical and Electronic Engineering, Nanyang Technological University、2.Insititute of Material Research and Engineering、3.Frontier Collaborative Research Center, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.2007.F-9-2