Normally-off AlGaN/GaN MIS-HFETs Using Non-polar a-Plane

Masayuki Kuroda; Tetsuzo Ueda; Tsuyoshi Tanaka

doi:https://doi.org/10.7567/SSDM.2007.G-1-2

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[G-1-2] Normally-off AlGaN/GaN MIS-HFETs Using Non-polar a-Plane

Masayuki Kuroda、Tetsuzo Ueda、Tsuyoshi Tanaka (1.Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.2007.G-1-2

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