p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs

Mitsuaki Shimizu; Guaxi Piao; Masaki Inada; Hajime Okumura; Yoshiki Yano; Nakao Akutsu

doi:https://doi.org/10.7567/SSDM.2007.G-1-4

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[G-1-4] p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs

Mitsuaki Shimizu、Guaxi Piao、Masaki Inada、Hajime Okumura、Yoshiki Yano、Nakao Akutsu (1.National Institute of Advanced Industrial Science and Technology、2.Tsukuba Laboratory, Taiyo Nippon Sanso Corporation)

https://doi.org/10.7567/SSDM.2007.G-1-4

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