[G-1-4] p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs
Mitsuaki Shimizu, Guaxi Piao, Masaki Inada, Hajime Okumura, Yoshiki Yano, Nakao Akutsu
(1.National Institute of Advanced Industrial Science and Technology, 2.Tsukuba Laboratory, Taiyo Nippon Sanso Corporation)
https://doi.org/10.7567/SSDM.2007.G-1-4