The Japan Society of Applied Physics

[G-1-4] p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs

Mitsuaki Shimizu、Guaxi Piao、Masaki Inada、Hajime Okumura、Yoshiki Yano、Nakao Akutsu (1.National Institute of Advanced Industrial Science and Technology、2.Tsukuba Laboratory, Taiyo Nippon Sanso Corporation)

https://doi.org/10.7567/SSDM.2007.G-1-4