Finger Length Optimization for AlGaN/GaN HEMT and InGaP/GaAs HBT by Using FDTD Electromagnetic and Device Co-Simulation Technique

Akira Chokki; Yasuta Shinohara; Ryo Ishikawa; Kazuhiko Honjo

doi:https://doi.org/10.7567/SSDM.2007.G-1-5

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[G-1-5] Finger Length Optimization for AlGaN/GaN HEMT and InGaP/GaAs HBT by Using FDTD Electromagnetic and Device Co-Simulation Technique

Akira Chokki, Yasuta Shinohara, Ryo Ishikawa, Kazuhiko Honjo (1.Advanced Wireless Communication Research Center (AWCC), The University of Electro-Communications)

https://doi.org/10.7567/SSDM.2007.G-1-5

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