Parasitic effects and reliability issues on GaN based HEMTs

Gaudenzio Meneghesso; Christian Dua; Marco Peroni; Michael Uren; Enrico Zanoni

doi:https://doi.org/10.7567/SSDM.2007.G-2-1

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[G-2-1] Parasitic effects and reliability issues on GaN based HEMTs

Gaudenzio Meneghesso、Christian Dua、Marco Peroni、Michael Uren、Enrico Zanoni (1.Department of Information Engineering, University of Padova、2.Alcatel-Thales III-V Lab, Microel. Group, GIE、3.Selex SI, GaAs Foundry Unit, Engineering Department Via Tiburtina、4.QinetiQ Ltd)

https://doi.org/10.7567/SSDM.2007.G-2-1

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