[G-2-4] Hot-Carrier Stress Effects on AlGaN/GaN HEMTs Employing 500 ℃ Oxidized Ni/Au Gate

Young-Hwan Choi、Jiyong Lim、In-Hwan Ji、Kyu-Heon Cho、Min-Koo Han (1.School of Electrical Eng. & Computer Science #50, Seoul National University)

https://doi.org/10.7567/SSDM.2007.G-2-4