Increase of Breakdown Voltage in AlGaN/GaN HEMTs by Employing As+ Ion Implantation on SiO2 Passivation Layer

Jiyong Lim; Young-Hwan Choi; In-Hwan Ji; Kyu-Heon Cho; Jihye Lee; William Jo; Min-Koo Han

doi:https://doi.org/10.7567/SSDM.2007.G-2-5

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[G-2-5] Increase of Breakdown Voltage in AlGaN/GaN HEMTs by Employing As+ Ion Implantation on SiO2 Passivation Layer

Jiyong Lim、Young-Hwan Choi、In-Hwan Ji、Kyu-Heon Cho、Jihye Lee、William Jo、Min-Koo Han (1.School of Electrical Eng. & Computer Science #50, Seoul National University、2.Department of Physics, Ewha Womans University)

https://doi.org/10.7567/SSDM.2007.G-2-5

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