Enhanced DC Characteristics of Si delta-doped AlGaN/GaN HFETs with p-GaN Backbarrier

H. C. Lee; S. Y. Hyun; S. W. Yun; C. Ostermaier; W. Y. Lee; J. B. Ha; H. I. Cho; S. H. Hahm; C. K. Hahn; H. C. Choi; J. H. Lee

doi:https://doi.org/10.7567/SSDM.2007.G-2-6

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[G-2-6] Enhanced DC Characteristics of Si delta-doped AlGaN/GaN HFETs with p-GaN Backbarrier

H. C. Lee, S. Y. Hyun, S. W. Yun, C. Ostermaier, W. Y. Lee, J. B. Ha, H. I. Cho, S. H. Hahm, C. K. Hahn, H. C. Choi, J. H. Lee (1.School of Electrical Engineering and Computer Science, Kyungpook National University, 2.Korea Electronics Technology Institute)

https://doi.org/10.7567/SSDM.2007.G-2-6

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