High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy

Hiroki Sugiyama; Toshihiko Kosugi; Haruki Yokoyama; Koichi Murata; Yasuro Yamane; Masami Tokumitsu; Takatomo Enoki

doi:https://doi.org/10.7567/SSDM.2007.G-3-2

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[G-3-2] High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy

Hiroki Sugiyama、Toshihiko Kosugi、Haruki Yokoyama、Koichi Murata、Yasuro Yamane、Masami Tokumitsu、Takatomo Enoki (1.NTT Photonics Laboratories、2.NTT Electronics Corporation)

https://doi.org/10.7567/SSDM.2007.G-3-2

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