[G-6-4] Shuttle Activation Annealing of Implanted Al in 4H-SiC

Tomokatsu Watanabe、Ryo Hattori、Masayuki Imaizumi、Tatsuo Oomori (1.Advanced Technology R&D Center, Mitsubishi Electric Corp.)

https://doi.org/10.7567/SSDM.2007.G-6-4