The Effect of Rapid Thermal Annealing on the Electrical Characteristics of ZnO TFTs

K. Remashan; D.K. Hwang; S.J. Park; J. H. Jang

doi:https://doi.org/10.7567/SSDM.2007.G-7-5

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[G-7-5] The Effect of Rapid Thermal Annealing on the Electrical Characteristics of ZnO TFTs

K. Remashan、D.K. Hwang、S.J. Park、J. H. Jang (1.Department of Information and Communication, Gwangju Institute of Science & Technology (GIST)、2.Department of Materials science and Engineering, Gwangju Institute of Science & Technology (GIST))

https://doi.org/10.7567/SSDM.2007.G-7-5

▲