[H-7-3] Analysis of charge accumulation in pentacene field effect transistor with ferroelectric gate insulator on the basis of Maxwell-Wagner model

Ryosuke Tamura、Shuhei Yoshita、Eunju Lim、Takaaki Manaka、Mitsumasa Iwamoto (1.Department of Physical Electronics, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.2007.H-7-3