[I-8-3] Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases

R. Matsumoto、M. Ikeda、S. Higashi、S. Miyazaki (1.Graduate School of Advanced Sciences of Matter, Hiroshima University)

https://doi.org/10.7567/SSDM.2007.I-8-3