[J-1-4] Investigation on the Body Bias Dependency of Gate Induced Drain Leakage Current in the Body-Tied finFET

Chul Lee、Makoto Yoshida、Kyoung-Ho Jung、Chang Kyu Kim、Hui-Jung Kim、Heungsik Park、Won-Sok Lee、Keunnam Kim、Jaerok Kahng、Wouns Yang、Donggun Park (1.Device Research Team、2.Process Development Team、3.CAE Team, Semiconductor R&D Center、4.Samsung Electronics)

https://doi.org/10.7567/SSDM.2007.J-1-4