The Japan Society of Applied Physics

[J-1-4] Investigation on the Body Bias Dependency of Gate Induced Drain Leakage Current in the Body-Tied finFET

Chul Lee, Makoto Yoshida, Kyoung-Ho Jung, Chang Kyu Kim, Hui-Jung Kim, Heungsik Park, Won-Sok Lee, Keunnam Kim, Jaerok Kahng, Wouns Yang, Donggun Park (1.Device Research Team, 2.Process Development Team, 3.CAE Team, Semiconductor R&D Center, 4.Samsung Electronics)

https://doi.org/10.7567/SSDM.2007.J-1-4