[J-3-2] ESR and PL Study of Charge Trapping Centers in Silicon Nitride Films and Its Verification with Novel ONO-Sidewall 2-bit/cell Nonvolatile Memory

Atsushi Toki、Noriaki Shinohara、Masayuki Nakano、Hiroshi Kotaki、Yoshiaki Kamigaki (1.Kagawa University, Dept. of Advanced Materials Science, Faculty of Engineering、2.Sharp Corporation, Corporate Research and Development Group)

https://doi.org/10.7567/SSDM.2007.J-3-2