[J-6-3] Gd doping improved resistive switching characteristics of TiO2-based resistive memory devices

L.F. Liu、J.F. Kang、H. Tang、N. Xu、Y. Wang、X.Y. Liu、X. Zhang、R.Q. Han (1.Institute of Microelectronics, Peking University)

https://doi.org/10.7567/SSDM.2007.J-6-3