[J-6-3] Gd doping improved resistive switching characteristics of TiO2-based resistive memory devices

L.F. Liu, J.F. Kang, H. Tang, N. Xu, Y. Wang, X.Y. Liu, X. Zhang, R.Q. Han (1.Institute of Microelectronics, Peking University)

https://doi.org/10.7567/SSDM.2007.J-6-3