[J-7-3] Nitrogen Profile Study for SiON Gate Dielectrics of Advanced DRAM

Shigemi Murakawa、Masashi Takeuchi、Minoru Honda、Shu-ichi Ishizuka、Toshio Nakanishi、Yoshihiro Hirota、Takuya Sugawara、Yoshitsugu Tanaka、Yasushi Akasaka、Akinobu Teramoto、Shigetoshi Sugawa、Tadahiro Ohmi (1.Tokyo Electron Ltd.、2.Management of Science and Technology, Graduate School of Engineering, Tohoku University、3.Tokyo Electron AT Ltd., SPA Development and Engineering、4.New Industry Creation Hatchery Center, Tohoku University)

https://doi.org/10.7567/SSDM.2007.J-7-3