[J-8-4] Endurance Characterization of Ferroelectric Cell in 64Mb FRAM Device By Analyzing the Space Charge Concentration

E. S. Lee、Y. M. Kang、D. J. Jung、H. H. Kim、Y. K. Hong、J. H. Park、S. K. Kang、J.-H. Kim、H. S. Kim、W. W. Jung、W. S. Ahn、J. Y. Jung、J. Y. Kang、D. Y. Choi、H. K. Goh、S. Y. Kim、S. Y. Lee、H. S. Jeong (1.Advanced Technology Team 2, Semiconductor R&D center、2.Samsung Electronics Co. LTD.)

https://doi.org/10.7567/SSDM.2007.J-8-4