Si Oxidation Mechanism in Ar/O2 Surface Wave Plasma

Keigo Takeda; Seigo Takashima; Masaru Hori

doi:https://doi.org/10.7567/SSDM.2007.P-1-2

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-1-2] Si Oxidation Mechanism in Ar/O2 Surface Wave Plasma

Keigo Takeda、Seigo Takashima、Masaru Hori (1.Electrical Engineering & Computer Science, Graduate School of Engineering, Nagoya University、2.Venture Business Laboratory, Nagoya University)

https://doi.org/10.7567/SSDM.2007.P-1-2

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