Activation of Implanted Phosphorus Atoms in Silicon Wafers by Infrared Semiconductor Laser Annealing Using Carbon Films as Optical Absorption Layers

Naoki Sano; Toshiyuki Sameshima; Yasuhiro Matsuda; Yasunori Andoh

doi:https://doi.org/10.7567/SSDM.2007.P-1-20

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-1-20] Activation of Implanted Phosphorus Atoms in Silicon Wafers by Infrared Semiconductor Laser Annealing Using Carbon Films as Optical Absorption Layers

Naoki Sano、Toshiyuki Sameshima、Yasuhiro Matsuda、Yasunori Andoh (1.Hightec Systems Corporation、2.Tokyo University of Agriculture and Technology、3.Nissin Ion Equipment Co., Ltd)

https://doi.org/10.7567/SSDM.2007.P-1-20

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