In-situ Doped Si Selective Epitaxial Growth for Raised Source/Drain Extension CMOSFET

Tetsuya Ikuta; Yuki Miyanami; Shigeru Fujita; Hayato Iwamoto; Shingo Kadomura; Takayoshi Shimura; Heiji Watanabe; Kiyoshi Yasutake

doi:https://doi.org/10.7567/SSDM.2007.P-1-23

[P-1-23] In-situ Doped Si Selective Epitaxial Growth for Raised Source/Drain Extension CMOSFET

Tetsuya Ikuta、Yuki Miyanami、Shigeru Fujita、Hayato Iwamoto、Shingo Kadomura、Takayoshi Shimura、Heiji Watanabe、Kiyoshi Yasutake (1.Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation、2.Graduate School of Engineering, Osaka University)

https://doi.org/10.7567/SSDM.2007.P-1-23

2007 International Conference on Solid State Devices and Materials

[P-1-23] In-situ Doped Si Selective Epitaxial Growth for Raised Source/Drain Extension CMOSFET