[P-1-23] In-situ Doped Si Selective Epitaxial Growth for Raised Source/Drain Extension CMOSFET
Tetsuya Ikuta, Yuki Miyanami, Shigeru Fujita, Hayato Iwamoto, Shingo Kadomura, Takayoshi Shimura, Heiji Watanabe, Kiyoshi Yasutake
(1.Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 2.Graduate School of Engineering, Osaka University)
https://doi.org/10.7567/SSDM.2007.P-1-23
