[P-1-27L] In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation

Hirokazu Furukawa、Seiichiro Higashi、Tatsuya Okada、Hirotaka Kaku、Hideki Murakami、Seiichi Miyazaki (1.Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University)

https://doi.org/10.7567/SSDM.2007.P-1-27L