Fabrication and characterization of poly(3-hexylthiophene)-based field-effect transistors with silsesquioxane gate insulators

Kenji Tomatsu; Takashi Hamada; Takashi Nagase; Takashi Kobayashi; Shuichi Murakami; Kimihiro Matsukawa; Hiroyoshi Naito

doi:https://doi.org/10.7567/SSDM.2007.P-10-6

[P-10-6] Fabrication and characterization of poly(3-hexylthiophene)-based field-effect transistors with silsesquioxane gate insulators

Kenji Tomatsu、Takashi Hamada、Takashi Nagase、Takashi Kobayashi、Shuichi Murakami、Kimihiro Matsukawa、Hiroyoshi Naito (1.Department of Physics and Electronics, Osaka Prefecture University、2.Technology Research Institute of Osaka Prefecture、3.Osaka Municipal Technical Research Institute、4.Innovation Plaza Osaka, Japan Science and Technology Agency)

https://doi.org/10.7567/SSDM.2007.P-10-6

2007 International Conference on Solid State Devices and Materials

[P-10-6] Fabrication and characterization of poly(3-hexylthiophene)-based field-effect transistors with silsesquioxane gate insulators