[P-2-7] Characterization of Strain in Si for High Performance MOSFETs

Daisuke Kosemura、Yasuto Kakemura、Tetsuya Yoshida、Atsushi Ogura、Masayuki Kohno、Tatsuo Nishita、Toshio Nakanisi (1.School of Science and Technology, Meiji University、2.TOKYO ELECTRON AT, SPA Development Engineering Dept.)

https://doi.org/10.7567/SSDM.2007.P-2-7