Characterization of Strain in Si for High Performance MOSFETs

Daisuke Kosemura; Yasuto Kakemura; Tetsuya Yoshida; Atsushi Ogura; Masayuki Kohno; Tatsuo Nishita; Toshio Nakanisi

doi:https://doi.org/10.7567/SSDM.2007.P-2-7

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-2-7] Characterization of Strain in Si for High Performance MOSFETs

Daisuke Kosemura, Yasuto Kakemura, Tetsuya Yoshida, Atsushi Ogura, Masayuki Kohno, Tatsuo Nishita, Toshio Nakanisi (1.School of Science and Technology, Meiji University, 2.TOKYO ELECTRON AT, SPA Development Engineering Dept.)

https://doi.org/10.7567/SSDM.2007.P-2-7

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