[P-3-1] Impact of Zr/Hf Ratio on Reliability of HfZrOX Gate Dielectric

J.C. Liao、Y.K. Fang*、Y.T. Hou、W. H. Tseng、J. Y. Yang、P.F. Hsu、Y.S. Chao、K.C. Lin、K.T. Huang、T.L. Lee、M.S. Liang (1.VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University、2.Taiwan Semiconductor Manufacturing Company)

https://doi.org/10.7567/SSDM.2007.P-3-1