[P-3-1] Impact of Zr/Hf Ratio on Reliability of HfZrOX Gate Dielectric

J.C. Liao, Y.K. Fang*, Y.T. Hou, W. H. Tseng, J. Y. Yang, P.F. Hsu, Y.S. Chao, K.C. Lin, K.T. Huang, T.L. Lee, M.S. Liang (1.VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 2.Taiwan Semiconductor Manufacturing Company)

https://doi.org/10.7567/SSDM.2007.P-3-1