Current Transportation Mechanism of HfO2 Gate Dielectrics with Silicon Surface Fluorine Implantation (SSFI) in CMOS Application

Woei Cherng Wu; Chao Sung Lai; Tsui Ming Wang; Jer Chyi Wang; Ming Wen Ma; Tien Sheng Chao

doi:https://doi.org/10.7567/SSDM.2007.P-3-2

[P-3-2] Current Transportation Mechanism of HfO2 Gate Dielectrics with Silicon Surface Fluorine Implantation (SSFI) in CMOS Application

Woei Cherng Wu、Chao Sung Lai、Tsui Ming Wang、Jer Chyi Wang、Ming Wen Ma、Tien Sheng Chao (1.Department of Electronic Physics, National Chiao Tung University、2.Department of Electronic Engineering, Chang Gung University、3.Nanya Technology Corporation、4.Department of Electronics Engineering, National Chiao Tung University)

https://doi.org/10.7567/SSDM.2007.P-3-2

2007 International Conference on Solid State Devices and Materials

[P-3-2] Current Transportation Mechanism of HfO2 Gate Dielectrics with Silicon Surface Fluorine Implantation (SSFI) in CMOS Application