[P-3-27L] A Comprehensive Study of Hot-Carrier Behaviors with Consideration of Non-Local, Series Resistance, Quantum, and Temperature Effects in Multi-Gate FinFETs

Jin-Woo Han、Donggun Park、Yang-Kyu Choi (1.Dept. of EECS, Korea Advanced Institute of Science and Technology、2.Device Research Team, Semiconductor R&D Division, Samsung Electronics Co.)

https://doi.org/10.7567/SSDM.2007.P-3-27L