A Comprehensive Modeling Study of Two-Dimensional Silicon Subbands Using a Full-Zone k.p Method

M. Szczap; N. Cavassilas; F. Michelini; F. Payet; F. Boeuf; T. Skotnicki

doi:https://doi.org/10.7567/SSDM.2007.P-3-29L

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-3-29L] A Comprehensive Modeling Study of Two-Dimensional Silicon Subbands Using a Full-Zone k.p Method

M. Szczap、N. Cavassilas、F. Michelini、F. Payet、F. Boeuf、T. Skotnicki (1.STMicroelectronics、2.L2MP, CNRS, UMR 6137, Bat. IRPHE, Technopole de Chateau-Gombert)

https://doi.org/10.7567/SSDM.2007.P-3-29L

▲