The Japan Society of Applied Physics

[P-3-29L] A Comprehensive Modeling Study of Two-Dimensional Silicon Subbands Using a Full-Zone k.p Method

M. Szczap, N. Cavassilas, F. Michelini, F. Payet, F. Boeuf, T. Skotnicki (1.STMicroelectronics, 2.L2MP, CNRS, UMR 6137, Bat. IRPHE, Technopole de Chateau-Gombert)

https://doi.org/10.7567/SSDM.2007.P-3-29L