A Comprehensive Modeling Study of Two-Dimensional Silicon Subbands Using a Full-Zone k.p Method

M. Szczap; N. Cavassilas; F. Michelini; F. Payet; F. Boeuf; T. Skotnicki

doi:https://doi.org/10.7567/SSDM.2007.P-3-29L

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-3-29L] A Comprehensive Modeling Study of Two-Dimensional Silicon Subbands Using a Full-Zone k.p Method

M. Szczap, N. Cavassilas, F. Michelini, F. Payet, F. Boeuf, T. Skotnicki (1.STMicroelectronics, 2.L2MP, CNRS, UMR 6137, Bat. IRPHE, Technopole de Chateau-Gombert)

https://doi.org/10.7567/SSDM.2007.P-3-29L

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