The impact of RTS on the Vt variation of 65nm MLC NOR flash memory

Yimao Cai; Wook-Hyun Kwon; Bong Yong Lee; Jung In Han; Chan-Kwang Park; Song Yun Heub

doi:https://doi.org/10.7567/SSDM.2007.P-4-8L

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-4-8L] The impact of RTS on the Vt variation of 65nm MLC NOR flash memory

Yimao Cai、Wook-Hyun Kwon、Bong Yong Lee、Jung In Han、Chan-Kwang Park、Song Yun Heub (1.Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., LTD.)

https://doi.org/10.7567/SSDM.2007.P-4-8L

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