The impact of RTS on the Vt variation of 65nm MLC NOR flash memory

Yimao Cai; Wook-Hyun Kwon; Bong Yong Lee; Jung In Han; Chan-Kwang Park; Song Yun Heub

doi:https://doi.org/10.7567/SSDM.2007.P-4-8L

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-4-8L] The impact of RTS on the Vt variation of 65nm MLC NOR flash memory

Yimao Cai, Wook-Hyun Kwon, Bong Yong Lee, Jung In Han, Chan-Kwang Park, Song Yun Heub (1.Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., LTD.)

https://doi.org/10.7567/SSDM.2007.P-4-8L

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