Dependence of Carrier Lifetime in InAlAs/InGaAs HEMTs on Gate-to-Source Voltage

Hirohisa Taguchi; Takuro Sato; Masashi Oura; Tsutomu Iida; Yoshifumi Takanashi

doi:https://doi.org/10.7567/SSDM.2007.P-6-1

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-6-1] Dependence of Carrier Lifetime in InAlAs/InGaAs HEMTs on Gate-to-Source Voltage

Hirohisa Taguchi、Takuro Sato、Masashi Oura、Tsutomu Iida、Yoshifumi Takanashi (1.Department of Materials Science and Technology, Faculty of Industrial Science and Technology Tokyo University of Science)

https://doi.org/10.7567/SSDM.2007.P-6-1

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