The Japan Society of Applied Physics

[P-6-1] Dependence of Carrier Lifetime in InAlAs/InGaAs HEMTs on Gate-to-Source Voltage

Hirohisa Taguchi、Takuro Sato、Masashi Oura、Tsutomu Iida、Yoshifumi Takanashi (1.Department of Materials Science and Technology, Faculty of Industrial Science and Technology Tokyo University of Science)

https://doi.org/10.7567/SSDM.2007.P-6-1